Inc6006as1
WebFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type), INC6001AC1 Datasheet, INC6001AC1 circuit, INC6001AC1 data sheet : ISAHAYA, … WebINC6006AP1 Datasheet(PDF) - Isahaya Electronics Corporation. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE, INC6006AP1 Datasheet, …
Inc6006as1
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Web・Complementary : INC6006AS1 APPLICATION High voltage switching. OUTLINE DRAWING UNIT:mm MAXIMUM RATING(Ta=25℃) SYMBOL PARAMETER RATING … WebThe INA851 is the industry's first high-precision instrumentation amplifier with fully differential outputs. This device is optimized to drive inputs of modern high performance analog-to-digital converters (ADCs) with fully differential inputs. The INA851 operates over a very-wide, single-supply or dual-supply range. The
WebINC6006AS1 Datasheet, Equivalent, Cross Reference Search. Type Designator: INC6006AS1 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.6 W. … WebALLPARTS PARTS LIST [I] Korea HQ. : Rm 1707, 1st Block, Ace High Tech City, 3Ga 54-20, Munrae-dong, Yeongdeungpo-gu, Seoul, Korea. ( Tel : 82-2-2634-6328 Fax : 82-2-2634-7328 ) China Office. : Rm 704, A block, Huangdu square, #3008 Yitian road, Futian district, Shenzhen city, Guangdong. province, China ( Tel : 86-755-8321-2156~7 Fax : 86-755 ...
Webinc6006as1: 151kb / 4p: for low frequency amplify application silicon npn epitaxial type more results. link url ... http://www.idc-com.cn/product/Search/Discreet/en/111/INC6006AS1
WebINA6006AS1 is a silicon PNP transistor. It is designed with high voltage. FEATURE ・High voltage VCEO = -150V ・Low voltage VCE(sat) = -0.5V(MAX) ・Small capacitance Cob=2.8pF(TYP) ・Complementary : INC6006AS1 APPLICATION Hi-Fi Audio, High voltage switching. OUTLINE DRAWING UNIT:mm MAXIMUM RATING(Ta=25℃)
WebScribd ist die weltweit größte soziale Plattform zum Lesen und Veröffentlichen. bite teeth whitening gelWebSSPRDJ4228-C MOSFET . Process : Trench ; Configuration : Dual ; Type : N ; VDSS (V) : 30 ; VGS (V) : #177; 20 ; RDS(on) (#937;) : 17 (m#937;) ; ID (A) : 25 ; PD (W) : 16.67 ; Package : DFN3x3-8DJ 25A, 30V, RDS(ON) 17m Dual N-Ch Enhancement Mode Power MOSFET . RoHS Compliant Product A suffix of -C specifies halogen lead-free . DESCRIPTION . The … das mangelnde licht theaterWebAMPLIFY Datasheet(PDF) - Guangdong Kexin Industrial Co.,Ltd - 2SA1364 Datasheet, Low Frequency Power Amplify Applications, Isahaya Electronics Corporation - RT1A3906-T112 Datasheet, List of Unclassifed Manufacturers - 2SB1314 Datasheet dasman international companyhttp://ec2-52-68-2-140.ap-northeast-1.compute.amazonaws.com/product/Search/Discreet/ja/111 das manufacturingWebINC6006AS1. Type name Availability Status Package Packaging Quantity Minimum Packaging Quantity Packaging Type ROHS Spice parameter; INC6006AS1: Preview: TO … bite that turns into blisterWebINC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = 160V CE BLow voltage VCE (sat) = 0.2V (MAX) Complementary bite thamesWebDownload INC6006AS1 Datasheet: Specifications. Isahaya Package: Micro: JEITA Package: JEDEC Package: TO-92S: AEC correspondence: Type: NPN: Collector to Emitter voltage?VCEO(V) 160: Collector current?IC(A) 0.1: Collector dissipation?PC(mW) 600: DC forward current gain hFE: 72 ? 330: Datasheet first page Image. das marble and granite